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| BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features * Build in Biasing Circuit; To reduce using parts cost & PC board space. * Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK-4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain BB101C Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 -0 6 25 100 150 -55 to +150 Unit V V V mA mW C C 2 BB101C Electrical Characteristics (Ta = 25C) Item Drain to source break down voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 6 -- -- 0.2 0.4 10 16 Typ -- -- -- -- -- -- -- 15 22 Max -- -- -- +100 100 0.8 1.0 20 -- Unit V V V nA nA V V mA mS Test conditions I D = 200 A VG1S = VG2S = 0 I G1 = +10 A VG2S = VDS = 0 I G2 = +10 A VG1S = VDS = 0 VG1S = +5 V VG2S = VDS = 0 VG2S = 5 V VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V I D = 100 A VDS = 5 V, VG1S = 5 V I D = 100 A VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 220 k VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 220 k, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 220 k f = 1 MHz VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 220 k, f = 900 MHz Gate 1 to source cutoff current I G1SS Gate 2 to source cutoff current I G2SS Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(off) Drain current Forward transfer admittance I D(op) |yfs| Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Marking is "AU-". Ciss Coss Crss PG NF 1.2 0.7 -- 16 -- 1.7 1.1 0.012 20 2.0 2.2 1.5 0.03 -- 3.0 pF pF pF dB dB 3 BB101C Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 Gate 2 Gate 1 RG VG1 Drain A ID Source Application Circuit VAGC = 4 to 0.3 V BBFET V DS = 5 V Output Input RG V GG = 5 V 4 BB101C Maximum Channel Power Dissipation Curve 200 Channel Power Dissipation Pch (mW) 25 Typical Output Characteristics VG2S = 4 V VG1 = VDS Drain Current ID (mA) 150 15 100 10 50 5 RG 0 50 100 150 200 0 Ambient Temperature Ta (C) 1 2 3 4 Drain to Source Voltage VDS (V) 10 0 20 k 20 0 k 15 1 k 0 18 k 20 2k 270 k 330 k 390 0 k = 47 k 5 Drain Current vs. Gate2 to Source Voltage 25 VDS = VG1 = 5 V Drain Current ID (mA) 20 k k 1 120 k 150 k 180 k 220 k 270 k 330 k 90 3 k 470 RG = 00 Drain Current vs. Gate1 Voltage 20 VDS = 5 V RG = 150 k Drain Current ID (mA) 16 4 12 V 15 3 V 2V 8 10 5 4 VG2S = 1 V 1 2 3 4 5 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 0 Gate1 Voltage VG1 (V) 5 BB101C Drain Current vs.Gate1 Voltege 20 VDS = 5 V RG = 220 k Drain Current ID (mA) 20 VDS = 5 V RG = 390 k 16 4V 3V Drain Current vs.Gate1 Voltege 16 Drain Current ID (mA) 12 12 4V 3V 2V 8 2V 8 4 VG2S = 1 V 4 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 Forward Transfer Admittance |y fs | (mS) 25 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage VDS = 5 V RG = 150 k 20 f = 1 kHz 15 Forward Transfer Admittance vs. Gate1 Voltage 25 VDS =5V RG = 220 k 20 f = 1 kHz 15 4V 3V 2V 4V 3V 2V 10 10 5 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 5 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 6 BB101C Forward Transfer Admittance vs. Gate1 Voltage 25 VDS = 5 V RG = 390 k 20 f = 1 kHz 15 Power Gain vs. Gate Resistance 30 25 Power Gain PG (dB) 20 15 10 5 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 0 50 Forward Transfer Admittance |y fs | (mS) 4V 3V 2V 10 5 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz 100 200 500 1000 2000 5000 Gate Resistance RG (k) Noise Figure vs. Gate Resistance 4 30 25 Noise Figure NF (dB) Power Gain PG (dB) 3 20 15 10 5 Power Gain vs. Drain Current 2 1 0 50 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz 100 200 500 1000 2000 5000 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 20 25 30 0 Gate Resistance RG (k) Drain Current ID (mA) 7 BB101C Noise Figure vs. Drain Current 4 Drain Current vs. Gate Resistance 30 25 Noise Figure NF (dB) 3 Drain Current ID (mA) 20 15 10 5 0 10 V DS = 5 V V G1 = 5 V V G2S = 4 V 30 100 300 1000 3000 10000 2 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 20 25 30 1 0 Drain Current ID (mA) Gate Resistance RG (k) Gain Reduction vs. Gate2 to Source Voltage 40 Input Capacitance Ciss (pF) VDS = 5 V VG1 = 5 V VG2S = 4 V RG = 220 k f = 900 MHz 4 Input Capacitance vs. Gate2 to Source Voltage VDS = 5 V VG1 = 5 V RG = 220 k f = 1 MHz Gain Reduction GR (dB) 30 3 20 2 10 1 0 1 2 3 4 5 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Gate2 to Source Voltage VG2S (V) 8 BB101C Output Capacitance vs. Gate2 to Source Voltage 4 Output Capacitance Coss (pF) VDS = 5 V VG1= 5 V RG = 220 k f = 1 MHz 3 2 1 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 9 BB101C Package Dimentions Unit: mm 2.0 0.2 1.3 0.65 0.65 0.3 - 0.05 + 0.1 0.425 0.3 - 0.05 + 0.1 0.16 - 0.06 + 0.1 3 2 2.1 0.3 1.25 0 ~ 0.1 4 0.3 - 0.05 0.65 + 0.1 1 0.6 0.425 0.9 0.1 0.4 - 0.05 + 0.1 1.25 0.2 Hitahi Code EIAJ JEDEC CMPAK-4 SC-82AB -- 10 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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